Investigation of via chain resistance in IMD (HDP-CVD/PE-CVD) planarized by CMP

摘要

The relationship between via chain resistance in IMD and CMP properties such as planarity and non-uniformity was investigated. WIWNU(within wafer non-uniformity) after CMP was slightly improved by the use of additional capping layer. HDP depsition without capping layer, however, showed better planarization effect. It was found that better CMP planarity resulted in better distribution of via chain resitance.