Multiple-Channel InGaAs/InGaAsP Electro-Absorption Intensity Modulator Fabircated Using Low Energy Phosphorous Ion Implantation Induced Intermixing

摘要

A new quantum-well intermixing process in InGaAs-InGaAsP structures, based on controlled low energy phosphorus (P~(++)) ion implantation, has been employed in the fabrication of multiple wavelength selective channel electro-absorption (EA) intensity modulators These modulators, fabricated on a single chip, have an intensity modulation depth as high as-11 dB for voltage swings as low as -6 V.