ELECTRICAL AND PHYSICAL PROPERTIES OF POLYSILICON FILM RESISTORS MODIFIED BY EXCIMER LASER ANNEALING

摘要

The electrical and physical properties of several 'in situ' doped poly silicon films have been investigated. These properties can be modified by applying Excimer Laser Annealing, in which the film is melted and the average grain size is enlarged during recrystallization. Also more dopants are activated resulting in a reduction of both the sheet resistance and the temperature dependence. The surface morphology has been studied by Atomic Force Microscopy and the determined average grain sizes have been correlated to the electrical results by applying a simple model in which the sheet resistance and temperature coefficient are expressed in terms of grain size and grain boundary density.