Practical Limitations for the Bi-Polar Pulse Sputtering of Al_2O_3 with Rotary Magnetron Targets Using a Reactive Voltage Controller

摘要

The high refractive index, superior electrical insulating properties, and physical encapsulation properties make aluminum oxide essential in many thin film stacks. The relatively slow sputter rate coupled with the high cost and complexity of advanced reactive process controllers often restricts the number of applications in which aluminum oxide is used. In this paper, the limitations for aluminum oxide reactive sputter deposition rate and film properties are explored for dual rotary magnetrons operating off a bi-polar pulse DC power supply. Sputtering hardware and process control optimization are implemented to maximize the deposition rates without reducing film quality. The impacts of several key variables are explored to provide process engineers with a thorough understanding of the hardware and process control requirements for an optimized reactive sputtering process.