Selective Au-Etching on Aged GaAs-based Devices

摘要

A specific problem in failure analysis of InGaAs/ AlGaAs laser diodes asked for a deprocessing tool able to selectively etch gold from a Ti/Pt/Au triple metal layer. Attempts made by the usual I_2/KI etch confirmed the damage that it causes to the crystal stack, and non-uniform attack of gold. A new etch, indicated as Epta-Methyl-bis-diodine, has been successfully employed. Careful time control and detailed characterization of the complex metallization pattern of the devices allowed not only to properly expose the Pt layer, but also to preserve the overall electrical connection, thus maintaining the capability of both measuring the electrical characteristics at low current injection and collecting the EBIC signal from the etched device.