Polysilicon TFT hydrogenation using backside nitride layer

机译：使用背面氮化物层的多晶硅TFT氢化

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A novel backside nitride hydrogenation scheme was used to fabricate polysilicon TFTs. Use of this layer increased the On/Off current by a factor of ten and decreased the turn-on voltage by 7 volts.

机译：使用新型背面氮化物氢化方案制造多晶硅TFT。使用该层的开/关电流将ON / OFF电流增加10倍并降低了7伏的开启电压。

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《Symposium on thin film transistor technologies》|1999年||共6页
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Lawrence K.Lam; Danny L.Chen; Dieter G.Ast; Electrochemical Society Inc.;
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中图分类半导体三极管（晶体管）;
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专利

1. Passivation kinetics of two types of defects in polysilicon TFT by plasma hydrogenation [J] . Wu I.-W., Huang T.-Y. IEEE Electron Device Letters . 1991,第4期

机译：等离子体氢化法在多晶硅TFT中两种缺陷的钝化动力学
2. Effect of hydrogenation of the leakage currents of laser-annealed polysilicon TFTs [J] . Aoyama T., Koike Y. IEEE Transactions on Electron Devices . 1991,第9期

机译：氢化对激光退火多晶硅TFT泄漏电流的影响
3. Effects of trap-state density reduction by plasma hydrogenation in low-temperature polysilicon TFT [J] . Wu I.-W., Lewis A.G. IEEE Electron Device Letters . 1989,第3期

机译：低温多晶硅TFT中通过等离子体加氢降低陷阱态密度的影响
4. Polysilicon TFT hydrogenation using backside nitride layer [C] . Lawrence K.Lam, Danny L.Chen, Dieter G.Ast, Symposium on thin film transistor technologies . 1999

机译：使用背面氮化物层的多晶硅TFT氢化
5. A study of the effect of stoichiometry and hydrogen content on the physical and electrical properties of silicon nitride and oxynitride layers on silicon and silicon dioxide [D] . Robitaille, Louis R. L. 1990

机译：化学计量和氢含量对硅和二氧化硅上氮化硅和氧氮化物层的物理和电学性质的影响的研究
6. Modification of Layered Graphitic Carbon Nitride by Nitrogen Plasma for Improved Electrocatalytic Hydrogen Evolution [O] . Ming Gao, Danni Liu, Huanhuan Yang, 2019

机译：氮等离子体改性层状石墨氮化物以改善电催化氢的释放
7. Improving the Microstructure and Electrical Properties of Aluminum Induced Polysilicon Thin Films Using Silicon Nitride Capping Layer [O] . Min-Hang Weng, Cheng-Tang Pan, Chien-Wei Huang, 2014

机译：用氮化硅覆盖层提高铝诱导多晶硅薄膜的微观结构和电性能

Polysilicon TFT hydrogenation using backside nitride layer

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