The effect of various deposition and rapid thermal processing (RTP) conditions on the crystallization temperature of amorphous silicon films deposited by either low pressure chemical vapor deposition (LPCVD) or plasma enhanced chemical vapor d eposition (PECVD) is reported. It is found that deposition temperature and pressure are the two most important deposition process parameters for both LPCVD and PECVD processes that affect the crystallization temperature, while RTP scane speed is the most important annealing parameter. Low crystallization temperatures (less than 600 deg C) compatible with glass substrates can be achieved with proper co-optimization of deposition and annealing conitions.
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