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Process of fabricating a semiconductor device in which one portion of an amorphous silicon film is thermally crystallized and another portion is laser crystallized
Process of fabricating a semiconductor device in which one portion of an amorphous silicon film is thermally crystallized and another portion is laser crystallized
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机译:制造半导体器件的方法,其中非晶硅膜的一部分被热结晶,而另一部分被激光结晶。
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摘要
A semiconductor circuit and a process for fabricating the same, said process comprising forming in contact with an amorphous silicon film, a substance containing a catalytic element; crystallizing selected portions of the amorphous silicon film by annealing said film at a temperature lower than the ordinary crystallization temperature of an amorphous silicon film; and then crystallizing the rest of the portions by irradiating thereto laser beam or an intense light having an intensity equivalent thereto. A process similar to the one above, wherein, the catalytic element is incorporated directly into the amorphous silicon film instead of bringing a substance containing the same into contact with the amorphous silicon film.
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