Deep Level Transient Spectroscopy (DLTS) has been applied in failure analysis of semiconductor devices. Deep level concentration and position of level in the band gap caused by trace of defects and metal-impurities in the depletion of PN junctionand Schottky barrier junction of various semiconductor devices have been detected by DLTS. After being compared of the difference of above mentioned microphysical quantities of an abnormal device and a normal device the origin of abnormal characteristicof a failure device has been explained satisfactorily. The problems of failure analysis resolved by our DLTS are as follows: 1. Transconductance dispersion of GaAs MESFET with increasing operating frequency. 2. Conversion efficiency degradation ofinfrared detector after high temperature storage test. 3. Excess switching time of switching transistor. The above mentioned results indicate that failure analysis using DLTS is effective, sensitive, nondestructive and low-priced.
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