Ultraviolet hotocomducting detectors based on ordered Al_xGa_(1-x)N films grown by modelcular beam epitaxy

机译：紫外线热变压检测器基于型号射线外延生长的有序AL_XGA_（1-X）N的膜

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Al_xGa_(1-x)N alloys were grwon on c-plane sapphire by molecular beam epitaxy. The composition of the alloys was varied by increasing the Al model fraction from 6

机译：通过分子束外延在C面蓝宝石上生长ALG（1-X）N合金。通过增加6的Al模型分数来改变合金的组成

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《Symposia on III-V nitride materials and processes》|1999年||共8页
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M.Misra; D.Korakakis; H.M.Ng; T.D.moustakas; Electrochemical Society Inc.;
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1. High efficiency ultraviolet emission from Al_xGa_(1-x)N core-shell nanowire heterostructures grown on Si (111) by molecular beam epitaxy [J] . Q. Wang, H. P. T. Nguyen, K. Cui, Applied Physics Letters . 2012,第4期

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4. Ultraviolet hotocomducting detectors based on ordered Al_xGa_(1-x)N films grown by modelcular beam epitaxy [C] . M.Misra, D.Korakakis, H.M.Ng, Symposia on III-V nitride materials and processes . 1999

机译：紫外线热变压检测器基于型号射线外延生长的有序AL_XGA_（1-X）N的膜
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8. Photoconducting ultraviolet detectors based on GaN films grown by electron cyclotron resonance molecular beam epitaxy [R] . Misra, M. , Shah, K. S. , Moustakas, T. D. , 1995

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Ultraviolet hotocomducting detectors based on ordered Al_xGa_(1-x)N films grown by modelcular beam epitaxy

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