In this work we use dislocation loops to monitor the interstitial injection during the oxidation of silicon at low temperatures (850 - 950°C). The interstitials captured by the loops are measured using Transmission Electron Microscopy. Using the wafer bonding technique we are able to form a silicon film with two loop layers formed at different distances from the surface and thus estimate the number of interstitials escaping from the top and captured by the buried loop layer during oxidation. The obtained results demonstrate that a loop layer is a very efficient sink for the injected interstitials and that the number of these atoms is a small but not negligible fraction of the total number of Si atoms consumed during oxidation.
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