Modeling of Time-Dependent Defect Generation during Constant Voltage Stress for Thin Gate Oxides of Submicron Metal-Oxide-Silicon Field-Effect Transistor

摘要

In this study, we examined time-evolution defect generation under constant-voltage stress for a 3-nm-thick gate oxide metal-oxide-silicon field-effect transistor (MOSFET). Defect generation under the stress is related to the density of electron traps that are generated from the relaxation of strained Si-0 bonds by injection holes. The solution for the time-dependent defect generation was calculated using short-time-measured gate leakage data and analytical models. This approach was taken by fitting an effective activation energy distribution from time-evolution-degradation electrical data. We assume that the disorder-induced variations in Si-O activation energy follow a Fermi-derivative distribution. Our methodology will provide the exact and convenient method of determining the degradation of gate oxides of nano scaled complementary MOS (CMOS) devices.