METHOD OF MEASURING A SILICON THIN FILM METHOD OF DETECTING DEFECTS IN A SILICON THIN FILM AND APPARATUS FOR DETECTING DEFECTS IN A SILICON THIN FILM

摘要

A silicon thin film measurement method for measuring the crystallinity of a silicon thin film sample and the lifetime of a free carrier is disclosed. The silicon thin film measurement method is characterized in that a capacitive sensor is placed on a silicon thin film sample with a predetermined air-gap spaced apart and the excitation light source module is turned off, A sensor is used to measure the air-gap size. The excitation light source module is operated to irradiate excitation light of ultraviolet rays onto the silicon thin film sample, and a change in the electrical conductivity of the silicon thin film sample is measured using a capacitive sensor , And normalizes the electrical conductivity variation based on the measurement result of the air-gap size, thereby eliminating the measurement error due to the air-gap deviation.