METHOD OF MEASURING A SILICON THIN FILM, METHOD OF DETECTING DEFECTS IN A SILICON THIN FILM, AND APPARATUS FOR DETECTING DEFECTS IN A SILICON THIN FILM

摘要

PURPOSE: silicon thin film measuring device, silicon thin film defect inspection method, defect detecting device and silicon provide the measurement free carrier service life and above-mentioned crystalline silicon thin film have it is non-contact and do not destroy sample analysis method pass through between form air-gap capacitance sensor and silicon thin film. ;CONSTITUTION: silicon thin film defect inspection method, although including the following steps: that capacitance sensor is arranged has predetermined air gap in capacitance sensor and silicon film sample (S510) in silicon film sample; The size of air gap is measured, while leaving (S530) using capacitance sensor excitation light source module; In excitation light source module and the module (S540) of silicon film sample and exciting light, the infrared excitation light source emitted is irradiated; It measures conductive variation silicon film sample and utilizes capacitance sensor (S550); And measurement error the air gap caused by eliminating is by the variation of standardization conductivity, according to the measurement result,Big small air gap. ;The 2013 of copyright KIPO submissions;[Reference numerals] (AA) starts; (BB) terminate; (S510) capacitance sensor is set, a detecting electrode is equipped with, charge supplies electrode, although reference electrode silicon film sample has predetermined air gap in capacitance sensor and silicon film sample; (S520) operation of capacitor sensor; (S530) amount of the capacitance charge supply electrode and reference electrode measurement charge that are formed between measurement is maintained at capacitive sensor; (S540) it runs module and has irradiated the excitation light source of exciting light, electrode is supplied just for the sake of the underlying charge in first area of silicon thin film, second area is located at silicon film sample region between detecting electrode and interconnecting piece, silicon thin film and is located at the first and second regions; (S550) transfer amount that the light-conductive rate silicon film sample measured transmits charge by measure passes through engaging zones from first area to second area; (S560) transfer amount of the amount deducted in the amount of effective charge by remaining charge from charge is obtained; (S570) error is detected in engaging zones, by the amount for analyzing effective charge