METHOD FOR REDUCTION OF FORMATION OF SILICON DEFECT AND COMPLEMENTARY METAL-OXIDE FILM INTEGRATED CIRCUIT CONSTITUTED SO AS TO REDUCE FORMATION OF THE SILICON DEFECT

摘要

PROBLEM TO BE SOLVED: To obtain a method in which a high-dose deep implantation can be used and in which a sensitivity with reference of a latch-up regarding a manufactured IC is suppressed, by a method wherein a part of a trench in the vertical direction is formed as a vertical plane inside a deep implantation region and interstitial silicon is recombined on the vertical plane. ;SOLUTION: A substrate 300 comprises a high-dose deep implantation region 302. In addition, when a deep trench 324 is formed in the substrate 300, a surface on which interstitial atoms and holes are recombined is formed on the sidewall of the trench 324 in the vertical direction. Then, the deep trench 324 is formed in the substrate 300, and interstitial atoms are filled on the surface by a recombinable material. Then, a method can be applied equally irrespective of the width and the spacing of the deep trench 324. In addition, the area of a plane in the vertical direction for the movement and the recombination of interstitial atoms generated during the processing operation of the substrate 300 is increased remarkably by the deep trench 324 and a trench filling material.;COPYRIGHT: (C)1999,JPO