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Study on nature of humidity sensitivity of porous silicon

机译:多孔硅湿度敏感性的性质研究

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In this paper,we present the makign method and formed conditions of humidity sensitivity porous silicon(PS),and study the influence of environment humidity on sesistance of PS.The resistance of PS increases in direct ratio with the time of humidity sucking.Humidity conductance of PS is ionic conduction that was proved by experiment.Therefore,we can discuss the nature of humidity sensitivity of PS by Grothus transmission theory of proton.The results that the resistance of PS increases in diect ratio with environmental humidity were derived.
机译:在本文中,我们介绍了Makign方法和形成的湿度敏感性多孔硅(PS)的条件,研究了环境湿度对PS血液震荡的影响。PS对湿度吸吮时的直接比率的抗性增加。电导率PS是通过实验证明的离子传导。因此,我们可以探讨PS的PS湿度敏感性的性质。衍生PS抗性与环境湿度的抗性的结果。

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