Comparison of porous silicon, porous polysilicon and porous silicon carbide as materials for humidity sensing applications

摘要

This paper investigates the suitability of porous polysilicon and porous SiC as materials for sensing humidity. The investigation is a continuation of earlier work on porous single-crystalline silicon, where it was shown that this material was appropriate for humidity sensing, and could be easily integrated with standard Si processing. It was also shown that membrane structures enable the integration of a heating device to 'reset' the system. The best microstructure for humidity sensing was obtained for low-doped p-type silicon. The advantage of using polysilicon is that it is possible to tune its response (by doping) so that it has only a very small temperature coefficient of resistance. The idea is that a humidity sensor with a very small temperature dependence could be realised. The advantage of using SiC is that it offers the possibility of a humidity sensor that could withstand very harsh chemical environments. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 10]