OPTICAL GAIN IMPROVEMENT OF GaAs LATERAL PHOTORESISTIVE ELEMENTS BY SULPHUR PASSIVATION OF THE SURFACE

摘要

Enhancement of the performance of photoresistive elements has been demonstrated by applying sulphur surface passivation using Na_2S· 9H_2O water solution, mainly due to the decrease of the surface recombination current, resulting in an increase of the light sensitivity and switching rate. These results confirm the passivation of surface states through surface sulphur treatments. Further investigations using layer thicknesses comparable with the light absorption depth, are necessary and also smaller gaps between the contacts, and the changes in the speed of such devices are to be studied.