This paper present HSPICE subcircuit model of FLOTOX EEPROM. Meanwhile, a method of parameter extraction is developed. A new voltage source of depletion in drain is introduced. After including the physical effects of the collapse of deep depletion, the abnormal current peak in the write operation is simulated successfully. The sub-circuit model of threshold voltage window degradation is also implemented, so this effect can be simulated in HSPICE.
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