Spectroscopic study on the effect of post-growth annealing of CdTe/C.dS thin fim photovoltaic devices

摘要

The depth dependence of photoluminescence from as grown and CdCl_2 treated polycrystalline CdS/CdTe solar cells has been compared using a bevel etch technique. It has been found that the three emission bands observed at 1.59eV, 1.55eV and 1 .45eV all became more intense after the treatment, with the emission at 1.55eV near the CdS/CdTe interface being the most affected.