Nanoimprint lithography (NIL) is a new lithography paradigm that is based on deformation of a resist by compression molding rather than altering its chemical structure by radiation, and is designed to fabricate nanostructures inexpensively with high throughput. In this paper, we present significant new developments in achieving holes and dots with 6 nm feature size, 40 nm period on silicon, and 10 nm feature size, 40 nm period on a Au substrate. Moreover, we present an application of NIL to the fabrication of nanoscale compact disks (NanoCDs) of 400 Gbits/in/sup 2/ data density.
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机译:NanoImprint光刻(NIL)是一种新的光刻范式,其基于通过压缩成型的抗蚀剂的变形而不是通过辐射改变其化学结构,并且设计成廉价地制造纳米结构,高通量均匀地制造纳米结构。在本文中,我们在实现具有6nm特征尺寸40nm的硅的孔和点的显着新的开发,以及Au衬底上的10nm特征尺寸40nm周期。此外,我们展示了NIL的延长到纳米级紧凑块(NANOCDS)的400gbits / in / sup 2 /数据密度的制造。
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