A high efficiency 0.15 /spl mu/m 2-mil thick InGaAs/AlGaAs/GaAs V-band power HEMT MMIC

摘要

We present a unique high performance 0.15 /spl mu/m InGaAs/AlGaAs/GaAs HEMT MMIC power amplifier fabricated with a 2-mil thick GaAs substrate which operates at V-band. The 2-stage 59-64 GHz power MMIC amplifier exhibits 27% peak power added efficiency at 60 GHz with 275 mW output power (350 mW/mm) and 11 dB power gain. When biased for higher output power, 400 mW output power was achieved at 60 GHz with 24.5% power added efficiency. This is the highest reported combination of output power and power added efficiency reported to date at this frequency band. This amplifier also exhibits outstanding wideband power characteristics with 25.5/spl plusmn/0.5 dBm output power measured from 59-64 GHz.