Subfemtojoule 0.15 /spl mu/m InGaP/InGaAs/GaAs pseudomorphic HEMT DCFL circuits under 1 V supply voltage

摘要

We have fabricated side-wall assisted 0.15 /spl mu/m T-shaped gate pseudomorphic HEMT DCFL circuits with InGaP donor layers and obtained 22.3 ps basic delay and 0.8 fJ power-delay products at a supply voltage Vdd of 0.6 V with the driver gate width of 2 /spl mu/m. A master-slave type divide-by-two frequency divider which consists of eight 2-input NAND gates using a dual gate electrode structure shows stable operation of 10 GHz toggle frequency with a power consumption of 4.5 mW at Vdd of 0.8 V.