Vacuum sublimation growth: 6H-SiC 'site-competition' epitaxy and study of 3C-SiC epitaxial layers grown on 6H-SiC substrates

摘要

A dependence of 6H-SiC epi layers doping level on silicon vapour pressure in the growth cell have been studied during vacuum sublimation growth. The obtained dependence can be explained by a "site-competition" model based on different position of donors and acceptors in the SiC crystal lattice. 3C-SiC epi layers with 4-5 mm~2 double position twins and low defect density (<10~2 cm~2) have been grown on 6H-SiC substrates. The 3C-SiC/6H-SiC structures were grown without damaged intermediate layers at the interface.