Electron microscopy techniques for evaluating epitaxial and bulk III-V compound semiconductors

摘要

Electron microscopy is an important technique to study interfaces and microdefects in advanced III-V compound semiconductors. The paper briefly reviews some of the TEM methods used to this purpose and shows examples of their application to the characterization of epitaxial structures such as InGaAs/GaAs and GaAs/Ge as well as processed substrates like implanted InP.