Epitaxial nucleation and growth mechanism of III-V compound semiconductors

N GOPALAKRISHNAN; R S QHALID FAREED; R DHANASEKARAN

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Epitaxial nucleation and growth mechanism of III-V compound semiconductors

机译：III-V族化合物半导体的外延成核与生长机理

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An attempt has been made to investigate nucleation and growth mechanism of III-V compound semiconductors from vapour-phase epitaxy (VPE) and liquid-phase electroepitaxial (LPEE) growth techniques. Critical nucleation parameters have been derived using cla

机译：已经尝试通过气相相外延（VPE）和液相电外延（LPEE）生长技术研究III-V型化合物半导体的成核和生长机理。关键成核参数已使用cla推导

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《Journal of the Indian Institute of Science 》 |2013年第2期| 共1页
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N GOPALAKRISHNAN; R S QHALID FAREED; R DHANASEKARAN;
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1. III-V compound semiconductor nanostructures on silicon: Epitaxial growth, properties, and applications in light emitting diodes and lasers [J] . Z. Mi, Y.-L. Chang Journal of Nanophotonics . 2009 ,第Null期

机译：硅上的III-V化合物半导体纳米结构：外延生长，性质及其在发光二极管和激光器中的应用
2. A machine condition transfer function approach to run-to-run and machine-to-machine reproducibility of III-V compound semiconductor molecular beam epitaxial growth [J] . Wang C., Chen P. IEEE Transactions on Semiconductor Manufacturing . 1999 ,第1期

机译：III-V型化合物半导体分子束外延生长的机器间传递和机器间再现性的机器条件传递函数方法
3. A machine condition transfer function approach to run-to-run andmachine-to-machine reproducibility of III-V compound semiconductormolecular beam epitaxial growth [J] . Wang C., Chen P., Madhukar A., IEEE Transactions on Semiconductor Manufacturing . 1999 ,第1期

机译：III-V型化合物半导体分子束外延生长的机器间传递和机器间再现性的机器条件传递函数方法
4. Reflection high-energy electron diffraction as an intrinsic material property sensor for machine condition transfer function in molecular beam epitaxial growth of III-V compound semiconductors [C] . P. Chen, C. Wang, A. Madhukar, Symposium on in situ process diagnostics and intelligent materials processing . 1998

机译：反射高能电子衍射作为机械条件传递函数的固有材料特性传感器，其分子束外延生长III-V复合半导体
5. Growth mechanisms and electronic structure of epitaxial (III-V)(1-x)(IV(2))(x) metastable semiconductors. [D] . Fons, Paul James. 1990

机译：外延（III-V）（1-x）（IV（2））（x）亚稳态半导体的生长机理和电子结构。
6. Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration [O] . Romain Cariou, Wanghua Chen, Jean-Luc Maurice, -1

机译：GaAs上的低温等离子体增强了CVD的硅外延生长：III-V / Si集成的新范例
7. Thermodynamic Analysis for Vapour Epitaxial Growth of III-V Solid Solution Semiconductors [O] . Katsunori YAMAGUCHI 2009

机译：III-V固溶液半导体蒸气外延生长的热力学分析
8. Molecular Beam Epitaxial Growth and Electrical and Optical Investigations of III-V Compound Semiconductors [R] . Madhukar, A. 1986

机译：分子束外延生长和III-V化合物半导体的电学和光学研究

Epitaxial nucleation and growth mechanism of III-V compound semiconductors

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