Positive chemically amplified resist for ArF excimer laser lithography composed of a novel transparent photoacid generator and an alicyclic terpolymer

摘要

A new positive chemically amplified resist which consists of a novel photoacid generator NEALS (new alkylsulfonium salt) and methacrylate terpolymer with tricyclodecanyl group (TCDA) has been developed. NEALS shows good thermal stability up to 151$DGR@C, high transparency and high acid generation efficiency for an ArF excimer laser exposure. A new base polymer with TCDA groups demonstrated high transparency (69.3%/$mu@m), high thermal stability up to 141$DGR@C, a good dry-etching resistance and high solubility for an aqueous base (tetramethylammonium hydroxide) developer. A 0.20 $mu@m lines and spaces pattern has been resolved using an ArF excimer laser exposure system (NA $EQ 0.55).