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Growth and analysis of a direct band-gap light-emitting structure on gallium phosphide

机译：磷化镓直接带间隙发光结构的生长和分析

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Summary form only given. We have grown approximately 20 /spl Aring/ thick InGaP pseudomorphic single quantum well ligh emitting structures of various In compositions on GaP substrate using flow-modulated OMVPE. The photoluminescence from quantum wells of various In compositions are given.

机译：摘要表格仅给出。使用流量调制的OMVPE，我们已经生长了大约20 / SPL浇铸/厚的铸造/厚的InGaP假素单量子孔的各种组合物中的各种组合物。给出来自组合物中各种量子孔的光致发光。

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《IEEE Lasers and Electro-Optics Society Annual Meeting 》|1996年||共2页
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Jong-Won Lee; Schremer A.; Institute of Electric and Electronic Engineer;
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中图分类自动化技术、计算机技术 ;
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专利

1. Enhanced indium phosphide substrate protection for liquid phase epitaxy growth of indium‐gallium‐arsenide‐phosphide double heterostructure lasers [J] . Journal of Applied Physics . 1983 ,第2期

机译：增强的磷化铟衬底保护层，用于铟镓镓砷化物磷化双异质结构激光器的液相外延生长
2. Electronic Structures of Free-Standing Nanowires made from Indirect Bandgap Semiconductor Gallium Phosphide [J] . Gaohua Liao, Ning Luo, Ke-Qiu Chen, Scientific reports. . 2016 ,第1期

机译：间接带隙半导体磷化镓制成的自由态纳米线的电子结构
3. Vibrational structure analysis of cobalt fluoro-porphyrin surface coatings on gallium phosphide [J] . Diana Khusnutdinova, Anna M. Beiler, Brian L. Wadsworth, Journal of porphyrins and phthalocyanines . 2018 ,第6期

机译：磷化镓钴氟卟啉表面涂层的振动结构分析
4. Growth and analysis of a direct band-gap light-emitting structure on gallium phosphide [C] . Jong-Won Lee, Schremer, A. . 1996

机译：磷化镓上带隙直接发光结构的生长与分析
5. Gas-source molecular beam epitaxial growth and characterization of the (aluminum,indium,gallium)nitride phosphide/gallium phosphide material system and its applications to light-emitting diodes. [D] . Odnoblyudov, Vladimir. 2006

机译：气体源分子束外延生长和表征（铝，铟，镓）氮化物磷化/磷化镓材料系统及其在发光二极管中的应用。
6. Structure-function analysis of human transforming growth factor-alpha by site-directed mutagenesis. [O] . J A Feild, R H Reid, D J Rieman, 1992

机译：通过定点诱变对人类转化生长因子-α进行结构功能分析。
7. Electronic Structures of Free-Standing Nanowires made from Indirect Bandgap Semiconductor Gallium Phosphide [O] . Liao, Gaohua, Luo, Ning, Chen, Ke Qiu, 2016

机译：由间接带隙半导体磷化镓制成的独立式纳米线的电子结构
8. Development of Gallium Arsenide-Phosphide Graded Band-GAP Base Transistor Structures [R] . 1965

机译：砷化镓 - 磷化物梯度带-Gap基晶体管结构的研制

Growth and analysis of a direct band-gap light-emitting structure on gallium phosphide

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