基于SOI衬底的谐振腔结构对锗直接带发光增强的研究

摘要

SOI-based resonant cavity was theoretically designed basing on the transition matrix method. High-quality Ge and Ge/SiGe multiple quantum wells were grown on SOI-based germanium virtual substrates by ultrahigh vacuum chemical vapor deposition. The room temperature photoluminescence of the samples indi- cates that the SOI-based resonant cavity can effectively enhance the photoluminescence originated from the Ge direct bandgap, which is in good agreement with the theoretical prediction.%基于散射矩阵法对SOI衬底的谐振腔结构进行了理论设计．采用超高真空化学气相沉积系统，在SOI基的Ge虚衬底上制备出高质量的Ge和Ge／SiGe多量子阱材料．室温下样品的光致发光谱表明SOI衬底的谐振腔结构对锗直接带发光起有效的强度增强作用，实验结果与理论预期符合得很好．