A novel technique for semi-insulating InP(Fe) by chloride VPE

摘要

The chloride vapor phase epitaxial (VPE) growth of semi-insulating (SI)InP (Fe) using N/sub 2/+H/sub 2/ as a carrier gas is reported for the first time. Iron doping is achieved by using FeCl/sub 2/ generated by reaction of HCl and Fe. The transport of iron as FeCl/sub 2/ is greatly improved by the use of N/sub 2/. A proper N/sub 2//H/sub 2/ ratio for the iron incorporation is discussed and a high valve of 5/spl times/10/sup 8/ /spl Omega/cm is obtained. Specifically, the technique has been successfully applied to the preparation of multi-quantum-well (MQW) laser diodes.