Annealed semi-insulating p-type InP grown by the Czochralski technique with Cu in the melt

摘要

InP crystals were grown by the Czochralski technique with an admixture of Cu in the melt. Samples of as-grown crystals were of n-type conductivity with the estimated concentration of Cu smaller than 5 x 10(15) cm(-3). The samples were converted to the p-type semi-insulating state by annealing at 500 degrees C followed by fast cooling. The annealed samples were investigated by temperature- dependent Hall measurements and low-temperature Fourier transform infrared absorption. New peaks around 2100 cm(-1) were interpreted as due to Cu2+ 3d internal transitions.