Study of the relationship between the epitaxial layer quality and the characteristic of the current regulator devices

摘要

An analysis of the relationship between epitaxial layer quality and the characteristics of current regulator devices (CRDs), and several methods for improving the epitaxial layer quality are reported. By improving the crystal structure integrity and the thickness and electrical resistivity uniformities of the epitaxial layer, the current value (I/sub H/) of the CRD is exactly controlled and the maximum breakdown voltage (V/sub B/) reaches 130 volts.