STUDY OF THE RELATIONSHIP BETWEEN THE EPITAXIAL LAYER QUALITY AND THE CHARACTERISTIC OF THE CURRENT REGULATOR DEVICES

摘要

In this paper anylisis of relationship between the epitaxial layer quality and the characteristic of current regulator devices (CRDs), and several methods for improving the quality of the epitaxial layer are reported. By improving the integrities of the crystal structure, the thickness and electrical resistivity uniformities of the epitaxial layer, the current value (I_H) of the CRD is exactly controlled and the maximum breakdown voltage (V_B) reaches 130 volts.