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A novel 850-nm surface-emitting LED with 131-nm spectral width

机译:具有131nm光谱宽度的新型850-nm表面发射LED

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Large bandwidth infrared light emitting diodes (LEDs) were fabricated by liquid-phase epitaxy. The spectral bandwidth is a maximum of 131 nm at room temperature (754-885 nm). Normally, the bandwidth of a 850-nm LED is 60 nm. The mean spectral bandwidth of the new LEDs is 110 nm at room temperature, 99 nm at -55 degrees C, and 120 nm at +125 degrees C. The optical power coupled through a 100-m 100- mu m-core-diameter optical fiber with NA=0.29 is typically -3 dBm. The power decrease by change of temperature is 3%/ degrees C. Initial results from an accelerated endurance test are presented. The characteristics of the new large bandwidth LED show good stability over a temperature range of -55 to +125 degrees C, which makes it suitable for wavelength division multiplex applications in aircraft and space systems.
机译:通过液相外延制造大带宽红外发光二极管(LED)。在室温(754-885nm)的光谱带宽最大为131nm。通常,850nm LED的带宽为60nm。新LED的平均光谱带宽在室温下为110nm,在-55摄氏度为-55℃,120nm处,120nm处为+125℃。光功率耦合到100m100μm芯直径光学具有Na = 0.29的纤维通常为-3 dBm。通过温度变化的功率降低为3%/℃。提出了加速耐久性测试的初始结果。新型大带宽LED的特点在-55至+125摄氏度的温度范围内显示出良好的稳定性,这使得适用于飞机和空间系统中的波分复用应用。

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