首页> 外文会议>Electronic Components and Technology Conference, 1992. Proceedings., 42nd >A novel 850-nm surface-emitting LED with 131-nm spectral width
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A novel 850-nm surface-emitting LED with 131-nm spectral width

机译:光谱宽度为131 nm的新型850 nm表面发射LED

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Large bandwidth infrared light emitting diodes (LEDs) were fabricated by liquid-phase epitaxy. The spectral bandwidth is a maximum of 131 nm at room temperature (754-885 nm). Normally, the bandwidth of a 850-nm LED is 60 nm. The mean spectral bandwidth of the new LEDs is 110 nm at room temperature, 99 nm at -55 degrees C, and 120 nm at +125 degrees C. The optical power coupled through a 100-m 100- mu m-core-diameter optical fiber with NA=0.29 is typically -3 dBm. The power decrease by change of temperature is 3%/ degrees C. Initial results from an accelerated endurance test are presented. The characteristics of the new large bandwidth LED show good stability over a temperature range of -55 to +125 degrees C, which makes it suitable for wavelength division multiplex applications in aircraft and space systems.
机译:通过液相外延制造大带宽红外发光二极管(LED)。在室温(754-885 nm)下,光谱带宽最大为131 nm。通常,一个850 nm LED的带宽为60 nm。新LED的平均光谱带宽在室温下为110 nm,在-55摄氏度下为99 nm,在+125摄氏度下为120 nm。光功率通过100-m100-μm核直径的光耦合NA = 0.29的光纤通常为-3 dBm。由于温度变化而导致的功率降低为3%/摄氏度。给出了加速耐力测试的初步结果。新型大带宽LED的特性在-55至+125摄氏度的温度范围内显示出良好的稳定性,这使其适用于飞机和太空系统中的波分复用应用。

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