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Submicron linewidth measurement using an interferometric optical profiler

机译:亚微米线宽测量使用干涉光学分析器

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Optical instruments for submicron linewidth measurement are limited by the resolution associated with the wavelength of light. By measuring phase, rather than intensity, the lateral resolution of the system can be improved. This paper describes a system based upon an interferometric optical profiler using a Linnik interferometer and narrow-band illumination. The system measures surface height directly using phase-measurement interferometry techniques. Three-dimensional maps of surface structure over 1024 $MUL 1024 pixels are produced. The system includes an 80486-based AT-compatible computer and a Videk Megaplus camera. The Videk Megaplus camera has 1320 $MUL 1030 active square pixels spaced at 6.8 $mu@m intervals. It outputs an 8-bit digital signal which is interfaced to a framegrabber, and intensity is displayed live on a high resolution monitor. The incoherent optical resolution of the system is 0.34 $mu@m, and the detector samples the surface every 0.034 $mu@m. It has been found that features as small as 0.5 $mu@m can easily be measured. Two calibration standards traceable to NIST with feature sizes on the order of 1 $mu@m have been used to calibrate the lateral dimensions of the system. Results of measurements of photoresist lines on silicon with 0.5 $mu@m lines are presented.
机译:用于亚微米线宽测量的光学仪器受与光波长相关的分辨率的限制。通过测量相位,而不是强度,可以提高系统的横向分辨率。本文介绍了一种基于使用LINNIK干涉仪和窄带照明的干涉光学分析器的系统。系统使用相位测量干涉测量技术直接测量表面高度。产生超过1024 $ MUL 1024像素的表面结构的三维图。该系统包括一个基于80486的AT兼容的计算机和Videk MegaPlus相机。 Videk MegaPlus相机有1320 $ MUL 1030主动方形像素,间隔6.8 $ MU @ M间隔。它输出一个连接到帧的8位数字信号,并且在高分辨率监视器上显示强度。系统的不连贯的光学分辨率为0.34 $ MU @ M,检测器每0.034 $ mu @ m对表面进行样本。已经发现,可以轻松测量小于0.5 $ MU @ M的特征。既可追溯到1 $ MU @ M的特征尺寸可追溯的两个校准标准都被用于校准系统的横向尺寸。呈现了0.5 $ MU @ M线的硅上光致抗蚀剂线测量结果。

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