Intermetallic compound and Kirkendall void growth in Cu pillar bump during annealing and current stressing

机译：在退火和电流应力期间Cu柱凸块的金属间化合物和Kirkendall void生长

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Cu pillar bump with eutectic SnPb was annealed and the micro structures were observed by scanning electron microscopy. Both of Cu₆Sn₅ and Cu₃Sn grew following parabolic rate law at 120 and 150degC. At 165degC, Cu_{6
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机译：用共晶SNPB的Cu柱凸块退火，通过扫描电子显微镜观察微结构。 Cu _{6 sn _{5 和Cu _{3 sn在120和150degc下抛物速率定律增加。 165degc，Cu _{6
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来源
《Electronic Components and Technology Conference》|2008年||共5页
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作者
Byoung-Joon Kim; Gi-Tae Lim; Jaedong Kim; Kiwook Lee; Young-Bae Park; Young-Chang Joo;
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原文格式 PDF
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中图分类 TN6-53;
关键词
annealing; copper alloys; crystal microstructure; current density; diffusion; flip-chip devices; lead alloys; scanning electron microscopy; solders; tin alloys; voids (solid); Cult; subgt; 3lt; /subgt; Sn; Cult; subgt; 6lt; /subgt; Snlt; subgt; 5lt; /subgt; Kirkendall void growth; activation energies;

机译：退火;铜合金;晶体微观结构;电流密度;扩散;倒装芯片器件;铅合金;扫描电子显微镜;焊料;锡合金;空隙（固体）;3 / sub＆gt;sn;cu＆lt;su;6＆lt;/ sub＆gt;sn＆lt;sn＆gt;5＆lt;/ sub＆gt;kirkendall void生长;激活能量;

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2. Cu-Al金属间化合物的形成与生长及其对电镀Cu/Al层状复合材料电性能的影响 [J] . 张健, 王斌昊, 陈国宏, 中国有色金属学报：英文版 . 2016,第012期
3. Effects of annealing and current stressing on the intermetallic compounds growth kinetics of Cu/thin Sn/Cu bump [J] . Myeong-Hyeok Jeong, Jae-Won Kim, Byung-Hyun Kwak, Microelectronic Engineering . 2012,第Jana期

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4. Intermetallic Compound Growth and Reliability of Cu Pillar Bumps Under Current Stressing [J] . BYOUNG-JOON KIM, GI-TAE LIM, JAEDONG KIM, Journal of Electronic Materials . 2010,第10期

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6. Intermetallic compound and Kirkendall void growth in Cu pillar bump during annealing and current stressing [C] . Byoung-Joon Kim, Gi-Tae Lim, Jaedong Kim, Electronic Components and Technology Conference . 2008

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Intermetallic compound and Kirkendall void growth in Cu pillar bump during annealing and current stressing

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