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A clamped through silicon via (TSV) interconnection for stacked chip bonding using metal cap on pad and metal column forming in via

机译:通过在焊盘上使用金属盖和金属柱在焊盘上形成堆叠芯片互连的硅通孔(TSV)互连。

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摘要

To prevent potential yield loss, achieve TSV with higher aspect ratio, improve the bonding reliability, and reduce the process cost, a clamped through silicon via (C-TSV) interconnection for stacked chip bonding is proposed and developed in this paper. Th
机译:为了防止潜在的屈服损失,实现具有较高纵横比的TSV,提高粘合可靠性,并降低工艺成本,提出并在本文中提出并开发了通过硅通孔(C-TSV)互连的硅通孔(C-TSV)互连。 TH.

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