New encapsulated semiconductor memory chip - has chips with bonding pads on central region, lead frame with leads connected to bonding parts, insulating adhesive, metal wire for electrical connection etc.

摘要

A novel semiconductor device comprises (1) a chip (3) with bonding pads (3a) on a central region of its bottom surface; (ii) a lead frame (10) including leads (11), which are connected to respective bonding pads (3a) for input/output purposes, and collector buses (12), which are connected to the current supply pads of the bonding pads (3a); (iii) insulating adhesive (6) for applying the inner sides (11a) for the leads and the inner sides (12a) of the bus leads onto the bottom surface of the chip (3); (iv) metal wires (7) for electrically connecting the inner sides (11a,12a) of the leads and bus leads to the respective bonding pads (3a); and (v) a cast resin material (8) which encapsulates the chip (3), while leaving the outer sides (11b,12b) of the lead frame leads exposed at the outside. The lead outer sides (11b,12b) are pref. applied on a (pref. polyimide-based) adhesive tape so that a one-piece frame is formed. The adhesive (6) may be an insulating film or mass of insulating material. The wires (7) are pref. gold or aluminium wires. USE/ADVANTAGE - The device is esp. a memory chip of a DRAM of 16 magabit or greater capacity. It requires little space for mounting on a circuit board, has reduced mfg. costs and has improved lead conductivity.