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9.5 Scandium Doped ALN PMUT Compatible with Pre-Processed CMOS Substrates

机译:9.5%钪掺杂Aln Pmut与预处理的CMOS基材相容

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This paper presents an 80 µm squared piezoelectric micromachined ultrasonic transducer (PMUT) using 9.5 % scandium-doped aluminum nitride (AlScN). The improvement in the effective piezoelectric coefficient (e31,f) and consequently in the membrane displacement was demonstrating according with the FEM simulation. The proposed device has a high piezoelectric coefficient factor (kt2) in air, 2.76 %, and also in liquid environment, 1.12 %. The output pressure normalized at 1.5 mm in Fluorinert gives 12.57 kPa/V/mm2, ~ 9 times higher than 7x7 AlScN array (1.4 kPa/V/mm2). Pulse-echo experiment was validated with a single PMUT considering as reflected surface the air-liquid interface.
机译:本文采用了80μm平方压电微机械超声换能器(Pmut),使用9.5%掺杂氮化铝(Alscn)。有效压电系数的改善(e 31,F 因此,在膜位移中,根据有限元模拟来展示。所提出的装置具有高压电系数因子(k t 2 )在空气中,2.76%,也在液体环境中,1.12%。在氟化物中的1.5mm标准化输出压力给出12.57 kPa / v / mm 2 ,高于7x7 ALSCN阵列的〜9倍(1.4 kPa / v / mm 2 )。考虑到空气液界面的反射表面,用单个Pmut验证脉冲回波实验。

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