Impact of Multi-Metal Gate Stacks on the Performance of β-Ga_2O_3 MOS Structure

摘要

Gallium oxide (Ga_2O_3) due to its Ultra-wide bandgap (UWB) becomes the most promising semiconductor material for future-generation electronic applications. The Ga_2O_3 semiconductor possesses excellent material properties such as ultra-wide bandgap of 4.8 eV, ability to withstand breakdown field ranging from 5 to 9 MV/cm along with superior thermal and chemical stability. Also, it has excellent Baliga's figure-of-merit (B-FOM). However, the performance of β-Ga_2O_3 devices is still limited due to the issue related to good ohmic contact materials. In this work, we have studied the Impact of using multi-metal gate stack arrangements on the performance of β-Ga_2O_3 MOS Structure. The performance parameters used in the analysis are I_(Dmax), I_(Dmin), I_(ON)/I_(OFF). gm. and g_d. It is observed that the Ti/Au metal stack arrangement shows better results among all the metal stack arrangements and hence found to be suitable for high power RF applications with low losses.