机译:具有栅极堆叠β-GA_2O_3 / P-GaN结构的E模式AlGaN / GaN HEMT的改进设计
Department of Information Science and Technology Nantong University Nantong Jiangsu Province 226019 China;
Department of Information Science and Technology Nantong University Nantong Jiangsu Province 226019 China;
Department of Information Science and Technology Nantong University Nantong Jiangsu Province 226019 China;
Department of Electronic Science and Engineering Nanjing University Nanjing Jiangsu Province 210023 China;
Department of Information Science and Technology Nantong University Nantong Jiangsu Province 226019 China;
Department of Information Science and Technology Nantong University Nantong Jiangsu Province 226019 China;
机译:栅极应力偏置后E-Mode P-GaN栅极AlGaN / GaN高电子移动晶体管的栅极电容和截止状态特性
机译:肖特基门P-Gan / AlGan / GaN Hemts常关操作的设计考虑因素
机译:逆向静电放电应力下P-GAN栅极E模式GAN HEMT的降解行为及机制
机译:具有p-GaN栅极结构的E型GaN HEMT的栅极和势垒层设计
机译:研究常关模式的AlGaN / GaN MOS HEMT器件,该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
机译:在6英寸N掺杂的低电阻率SiC基板上的常压P-GaN栅极AlGaN / GaN Hemts的高热耗散
机译:常关P-GaN门控AlGaN / GaN Hemts使用等离子体氧化技术在接入区域中