A G-band High-Gain Power Amplifier with Positive Voltage-Feedback in 55-nm CMOS Technology

摘要

This paper presents a five-stage single-ended G-band power amplifier (PA) using 55-nm CMOS process. Each stage of the PA adopts common source topology with positive voltage-feedback coupled through adjacent coplanar waveguide (CPW) stubs. Full-wave simulation shows a saturated output power of 9 dBm, output P1dB of 4.3 dBm, a small signal gain of 24 dB, and a peak PAE of 10%, with supply voltage of 1.2V. The 3-dB bandwidth of this PA is 18 GHz from 163 to 181 GHz.