Hot carrier luminescence for backside 0.15 μm CMOS device analysis

摘要

Silicon avalanche photodiode (APD) and microchannel plate imaging (Mepsicron) detectors were utilized to perform circuit analysis through the silicon backside on a 0.15 μm CMOS test device. In addition to acquiring timing data on the device, the application also focused on several characteristics of hot carrier detection: 1) comparison of the use of APD and Mepsicron detectors, 2) sensitivity of hot carrier detection rate to operating voltage, 3) influence of capacitive load on hot carrier detection rate, and 4) correlation of emission pulse width with SPICE simulated fall time using a post-layout RC extracted netlist.