This paper considers the physical mechanisms responsible for the progressive (i.e. smooth or noisy) breakdown manifestation commonly measured on ultra-thin oxides (Tox<25 Å). First, it is verified that the theory previously published is relevant by highlighting progressive behavior predicted on thicker oxides (50 Å). Second, the stored energy is shown not to be correlated to the progressive behavior even if it influences the failure and its occurrence. At last, the progressiveness being gate voltage and temperature driven, it is stated that the defect generation probability drives the breakdown degradation after its creation. This is proven by measuring the influence on the progressiveness of a bulk bias applied during the stress of a pMOS in the inversion regime.
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