The impact of NBTI and HCI on deep sub-micron PMOSFETs' lifetime

摘要

There have been new phenomena observed in advanced deep sub-micron CMOS technologies. Threshold voltage shift in deep submicron dual gate PMOSFETs due to negative bias temperature instability (NBTI) has become one of major issues among them in terms of reliability concern. In this work, NBTI and hot carrier injection (HCI) effects on the lifetime of 0.13 μm technology with 1.3 nm-thick gate dielectric were investigated and we found NBTI can be a critical limitation of reliability in advanced deep sub-micron technologies.