10-Gbit/s GaAs MESFET IC's for ultra high-speed transmissionsystems

摘要

10-Gbit/s digital ICs for ultra high-speed transmission systemshave been designed and developed. Self-aligned GaAs MESFETs with a gatelength of 0.2 μm are used in these ICs. A 4-bit multiplexer, a 4-bitdemultiplexer, and a decision circuit successfully operate at 10 Gbit/swith a single power supply of -3.5 V. The fabrication process and thecircuit performance are described