MOSFET devices with polysilicon on single-layer HfO₂high-K dielectrics

摘要

MOSFETs and MOSCAPs of a single-layer thin HfO₂ gatedielectric with dual polysilicon gate were fabricated with self-alignedprocess and characterized. Polysilicon and dopant activation processeswere optimized such that leakage current and equivalent oxide thickness(EOT) of HfO₂ remain low (EOT of 12.0 Å.HfO₂ with 1×10-3 A/cm2 at Vg=1.0V). Reasonable N- and P-MOSFET characteristics such as subthresholdswing of 74 mV/decade and output currents were also demonstrated