The equivalence of van der Ziel and BSIM4 models in modeling theinduced gate noise of MOSFETs

摘要

This paper is the first independent comparison between BSIM4 andthe van der Ziel models for induced gate noise. Despite the verydifferent modeling strategies, BSIM4 successfully reproduces theclassical van der Ziel model, introducing only small errors in thecorrelated noise term. In the case of practical circuits, noticeableerrors usually arise for very low gate bias conditions yet the errorsare acceptably small. Therefore, the two models can be considered asbeing equivalent to each other in most practical circuits, includingnongrounded source conditions of operation