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The Equivalence of van der Ziel and BSIM4 Models in Modeling the Induced Gate Noise of MOSFETs

机译：Van der Ziel模型和BSIM4模型在MOSFET感应栅极噪声建模中的等效性

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Jung-Suk Goo William; William Liu; Chang-hoon Choi; Keith R. Green; Zhiping Yu; Thomas H. Lee; Robert W. Dutton;
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1. Substrate-Induced Noise Model and Parameter Extraction for High-Frequency Noise Modeling of Sub-Micron MOSFETs [J] . Ong S.N., Yeo K.S., Chew K.W.J., Microwave Theory and Techniques, IEEE Transactions on . 2014,第9期

机译：亚微米MOSFET高频噪声建模的基片诱导噪声模型和参数提取
2. Physical DC and thermal noise models of 18nm double-gate junctionless p-type MOSFETs for low noise RF applications [J] . Jeong Eui-Young, Deen M. Jamal, Chen Chih-Hung, Japanese journal of applied physics . 2015,第4s期

机译：适用于低噪声RF应用的18nm双栅极无结p型MOSFET的物理DC和热噪声模型
3. A Low-frequency Noise Model For Advanced Gate-stack Mosfets [J] . Zeynep Celik-Butler, Siva Prasad Devireddy, Hsing-Huang Tseng, Microelectronics reliability . 2009,第2期

机译：用于高级栅叠Mosfets的低频噪声模型
4. The equivalence of van der Ziel and BSIM4 models in modeling the induced gate noise of MOSFETs [C] . Jung-Suk Goo, Liu, W. Electron Devices Meeting, 2000. IEDM Technical Digest. International . 2000

机译：Van der Ziel和BSIM4模型在MOSFET感应栅极噪声建模中的等效性
5. 1/f noise in hafnium based high-k gate dielectric MOSFETs and a review of modeling [D] . Devireddy, Siva Prasad. 2007

机译：基于Hafnium的高k栅极电介质MOSFET的1 / F噪声及造型评论
6. Protective antitumor immunity induced by tumor cell lysates conjugated with diphtheria toxin and adjuvant epitope in mouse breast tumor models [O] . Ze-Yu Wang, Yun Xing, Bin Liu, 2012

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7. Modeling the Partition of Noise From the Gate-Tunneling Current in MOSFETs [O] . Juan C. Ranuárez, Student Member, M. Jamal Deen, 2008

机译：根据MOSFET的栅极隧穿电流对噪声分配进行建模

The Equivalence of van der Ziel and BSIM4 Models in Modeling the Induced Gate Noise of MOSFETs

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